4-ÇÁ·Îºê ÃøÁ¤¹ýÀ» ÅëÇÑ ºñÀúÇ× ÃøÁ¤ÀÇ ¿ø¸®¸¦ ¼³¸íÇÑ Ã¥.
Ä¿ÇÇ ÇÑ ÀÜ »ç¸ÔÀ» ¸¸ÅÀÇ ´Üµ· 5000¿ø¸¸ ÀÌ Ã¥¿¡ ÅõÀÚÇϸé, ´ç½Åµµ ºñÀúÇ× ÃøÁ¤ÀÇ ¿ø¸®¸¦ ÀÌÇØÇÒ ¼ö ÀÖ´Ù.
0. ½ÃÀÛÇÏ´Â ¸»
1. Àü±â
A. Â÷Áã (Charge)
B. Àü±âÀå (Electric field)
C. °¡¿ì½º ¹ýÄ¢ (Gauss¡¯ law)
D. Æ÷ÅÙ¼È (Potential)
E. Àü·ù, ÀúÇ× (Current, resistance)
F. ȸ·Î (Circuit)
2. 4-Æ÷ÀÎÆ® ÇÁ·Îºê ÃøÁ¤ (4-Point Probe Measurement)
A. ¹úÅ© ºñÀúÇ× (Resistivity)
B. ¹Ú¸· ¸éÀúÇ× (Sheet resistance)
C. °æ°è ºÎ±Ù¿¡¼ ºñÀúÇ×
D. ¿ÀÂ÷ º¸Á¤ (Error correction)
3. ´ÙÃþ¹Ú¸·¿¡¼ ¸éÀúÇ× ÃøÁ¤ (Sheet resistance on multi-layer thin films)
A. ±âº» ±¸Á¶
B. ÃøÁ¤ °á°ú ¹× Çؼ®
C. MRAMÀÇ ¸éÀúÇ×
4. ³ª³ë »çÀÌÁî ¹Ú¸·¿¡¼ ¸éÀúÇ×
A. FS ¸ðµ¨ (Fuchs-Sondheimer model)
B. MS ¸ðµ¨ (Mayadas-Shatzkes model)
5. ³¡¸Î´Â ¸»